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025N06N(2014) Datasheet - Infineon

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MFG CO.
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Metal Oxide Semiconductor Field Effect Transistor

OptiMOS™ Power-Transistor, 60V

Features
• Optimized for synchronous rectification
• 100% avalanche tested
• Superior thermal resistance
• N-channel, normal level
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21

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Part Name
Description
PDF
MFG CO.
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