Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
Home >>> Intel >>> 28F160B3 Datasheet

28F160B3 Datasheet

Part Name
Description
MFG CO.
Other PDF
  not available.
PDF
DOWNLOAD     
28F160B3 image

INTRODUCTION
This preliminary datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.8V–2.2V or 2.7V–3.6V I/Os and a low VCC/VPP operating range of 2.7V–3.6V for read and program/erase operations. In addition this family is capable of fast programming at 12V. Throughout this document, the term “2.7V” refers to the full voltage range 2.7V–3.6V (except where noted otherwise) and “VPP = 12V” refers to 12V ±5%. Section 1 and 2 provides an overview of the flash memory family including applications, pinouts and pin descriptions. Section 3 describes the memory organization and operation for these products. Finally, Sections 4, 5, 6 and 7 contain the operating specifications.

■ Flexible SmartVoltage Technology
    - 2.7V–3.6V Program/Erase
    - 2.7V–3.6V Read Operation
    - 12V VPP Fast Production Programming
■ 2.7V or 1.8V I/O Option
    - Reduces Overall System Power
■ Optimized Block Sizes
    - Eight 4-KW Blocks for Data, Top or Bottom Locations
    - Up to Thirty-One 32-KW Blocks for Code
■ High Performance
    - 2.7V–3.6V: 120 ns Max Access Time
■ Block Locking
    - VCC-Level Control through WP#
■ Low Power Consumption
    - 20 mA Maximum Read Current
■ Absolute Hardware-Protection
    - VPP = GND Option
    - VCC Lockout Voltage
■ Extended Temperature Operation
    - –40°C to +85°C
■ Supports Code Plus Data Storage
    - Optimized for FDI, Flash Data Integrator Software
    - Fast Program Suspend Capability
    - Fast Erase Suspend Capability
■ Extended Cycling Capability
    - 10,000 Block Erase Cycles
■ Automated Word Program and Block Erase
    - Command User Interface
    - Status Registers
■ SRAM-Compatible Write Interface
■ Automatic Power Savings Feature
■ Reset/Deep Power-Down
    - 1 µA ICCTypical
    - Spurious Write Lockout
■ Standard Surface Mount Packaging
    - 48-Ball µBGA* Package
    - 48-Lead TSOP Package
■ Footprint Upgradeable
    - Upgradeable from 2-, 4- and 8-Mbit Boot Block
■ ETOX™ V (0.4 µ) Flash Technology

 

Part Name
Description
PDF
MFG CO.
SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 4-MBIT (256K X 16), 8-MBIT (512K X 16), 16-MBIT (1024K X 16) FLASH MEMORY FAMILY
Intel
16 Mbit(1 Mbit x 16, 2 Mbit x 8) 5V Single Voltage Flash Memory
Sharp Electronics
16 Mbit(1 Mbit x 16, 2 Mbit x 8) Flash Memory
Sharp Electronics
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
STMicroelectronics
128 Mbit (16 Mb x 8 or 8 Mbx 16, page, uniform block) 3 V supply Flash memory
Numonyx -> Micron
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
Eon Silicon Solution Inc.
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
Oki Electric Industry
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit™ 3.0 Volt-only Boot Sector Flash Memory
Advanced Micro Devices
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
Oki Electric Industry

Share Link: 

All Rights Reserved© datasheetq.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]