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2N3553 Datasheet - NJSEMI

Part Name
Description
MFG CO.
2N3553
NJSEMI
New Jersey Semiconductor NJSEMI
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VHF Silicon NPN Power Transistor

The 2N3553 is a silicon epitaxial planar transistor of NPN structure. This device is intended for large signal, high power oscillator-amplifier application in the VHF-UHF (100MC to 400MC) region. The 2N3553 transistor utilizes a multi-emitter structure consisting of many separate emitter areas interconnected by metal applied on the silicon wafer using advanced photo-etching techniques. This processing technology applied to these transistors results in the high efficiency, high-gain characteristics desirable for UHF operation.

 

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