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2N3719 Datasheet

Part NameDescriptionManufacturer
2N3719 Silicon PNP Power Transistors Microsemi
Microsemi Corporation Microsemi
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DESCRIPTION:
These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.

FEATURES:
• Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40 Vdc (Min) - 2N3719
• DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc
• Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc
• High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ)

APPLICATIONS:
• High-Speed Switching
• Medium-Current Switching
• High-Frequency Amplifiers

 

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