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2N3771G Datasheet

Part NameDescriptionManufacturer
2N3771G High Power NPN Silicon Power Transistors ON-Semiconductor
ON Semiconductor ON-Semiconductor
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These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.

Features
• Forward Biased Second Breakdown Current Capability
   IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771
          = 2.5 Adc @ VCE = 60 Vdc − 2N3772
• Pb−Free Packages are Available*

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