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2N7002F Datasheet

Part NameDescriptionManufacturer
2N7002F N-channel TrenchMOS FET Philips
Philips Electronics Philips
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2N7002F image

General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Features
Logic level threshold compatible
Surface-mounted package
Very fast switching
TrenchMOS technology

Quick reference data
VDS  ≤  60 V
RDSon  ≤  2ohm
ID  ≤  475 mA
Ptot  ≤  0.83 W2N7002F

 

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