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2SA1306 Datasheet

Part NameDescriptionManufacturer
2SA1306 Silicon PNP Power Transistors NJSEMI
New Jersey Semiconductor NJSEMI
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2SA1306 image

DESCRIPTION
• Good Linearity of HFE
• High Collector-Emitter Breakdown VoltageV(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B
• Complement to Type 2SC3298/A/B

APPLICATIONS
• Power amplifier applications.
• Driver stage amplifier applications

 

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