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2SA1434 Datasheet

Part NameDescriptionManufacturer
2SA1434 PNP Epitaxial Planar Silicon Transistor Twtysemi
TY Semiconductor Twtysemi
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2SA1434 image

Features
● Adoption of FBET process.
● High DC current gain (hFE=500 to 1200).
● Low collector-to-emitter saturation voltage (VCE(sat) ≤ 0.5V).
● High VEBO(VEBO ≥ 15V).

 

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