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2SB1162 Datasheet

Part NameDescriptionManufacturer
2SB1162 Silicon PNP Power Transistor NJSEMI
New Jersey Semiconductor NJSEMI
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2SB1162 image

DESCRIPTION
• Collector-Emitter Breakdown Voltage- :V(BR)CEO=-160V(Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SD1717

APPLICATIONS
• Designed for high power amplifier applications

 

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