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2SB1190 Datasheet

Part NameDescriptionManufacturer
2SB1190 Silicon PNP Power Transistor NJSEMI
New Jersey Semiconductor NJSEMI
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2SB1190 image

DESCRIPTION
• High Power Dissipation
• High Collector-Emitter Breakdown Voltage- :V(BR)CEO=-150V(Min.)
• Complement to Type 2SD1770

APPLICATIONS
• Power amplifier applications.
• TV vertical deflection output applications.

 

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