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3SK324 Datasheet

Part NameDescriptionManufacturer
3SK324 Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier Renesas
Renesas Electronics Renesas
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Features
• Low noise characteristics; NF = 1.0 dB typ. (at f = 900 MHz)
• High gain characteristics; PG = 24 dB typ. (at f = 900 MHz)
• Capable low voltage operation; +B = 3.5 V
• High Endurance Voltage; VDS = 6 V

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