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AM29LV6402M Datasheet

Part NameDescriptionManufacturer
AM29LV6402M 128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O™ Control AMD
Advanced Micro Devices AMD
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GENERAL DESCRIPTION
The Am29LV6402M consists of two 64 Mbit, 3.0 volt single power supply flash memory devices and is organized as 4,194,304 doublewords or 8,388,608 words. The device has a 32-bit wide data bus that can also function as an 16-bit wide data bus by using the WORD# input. The device can be programmed either in the host system or in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Single power supply operation
    — 3 volt read, erase, and program operations
■ VersatileI/OTM control
    — Device generates data output voltages and tolerates data input voltages on the CE# and DQ inputs/outputs as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V
■ Manufactured on 0.23 µm MirrorBitTM process technology
■ SecSi™ (Secured Silicon) Sector region
    — 128-doubleword/256-word sector for permanent, secure identification through an 8-doubleword/16-word random Electronic Serial Number, accessible through a command sequence
    — May be programmed and locked at the factory or by the customer
■ Flexible sector architecture
    — One hundred twenty-eight 32 Kdoubleword (64 Kword) sectors
■ Compatibility with JEDEC standards
    — Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection
■ 100,000 erase cycles per sector
■ 20-year data retention at 125°C

PERFORMANCE CHARACTERISTICS
■ High performance
    — 100 ns access time
    — 30 ns page read times
    — 0.5 s typical sector erase time
    — 22 µs typical write buffer doubleword programming time: 16-doubleword/32-word write buffer reduces overall programming time for multiple-word updates
    — 4-doubleword/8-word page read buffer
    — 16-doubleword/32-word write buffer
■ Low power consumption (typical values at 3.0 V, 5 MHz)
    — 26 mA typical active read current
    — 100 mA typical erase/program current
    — 2 µA typical standby mode current
■ Package options
    — 80-ball Fortified BGA

SOFTWARE & HARDWARE FEATURES
■ Software features
    — Program Suspend & Resume: read other sectors before programming operation is completed
    — Erase Suspend & Resume: read/program other sectors before an erase operation is completed
    — Data# polling & toggle bits provide status
    — Unlock Bypass Program command reduces overall multiple-word or byte programming time
    — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
■ Hardware features
    — Sector Group Protection: hardware-level method of preventing write operations within a sector group
    — Temporary Sector Unprotect: VID-level method of changing code in locked sectors
    — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings
    — Hardware reset input (RESET#) resets device
    — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 

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