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BB301M Datasheet

Part NameDescriptionManufacturer
BB301M Built in Biasing Circuit MOS FET IC VHF RF Amplifier Renesas
Renesas Electronics Renesas
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BB301M image

Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)
• Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143Rmod)

 

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