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BB504M Datasheet

Part NameDescriptionManufacturer
BB504M Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier Renesas
Renesas Electronics Renesas
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Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz
• High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
• Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; MPAK-4 (SOT-143Rmod)

 

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