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BDX34CG-2007 Datasheet

Part NameDescriptionManufacturer
BDX34CG Darlington Complementary Silicon Power Transistors ON-Semiconductor
ON Semiconductor ON-Semiconductor
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BDX33B image

These devices are designed for general purpose and low speed switching applications.

Features
• High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0
• Collector-Emitter Sustaining Voltage at 100 mAdc
   VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B
                       = 100 Vdc (min) - BDX33C, BDX334C
• Low Collector-Emitter Saturation Voltage
   VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
                                                 - BDX33B, 33C/34B, 34C
• Monolithic Construction with Build-In Base-Emitter Shunt Resistors
• Pb-Free Packages are Available*

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