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BM29F040 Datasheet

Part NameDescriptionManufacturer
BM29F040 4 MEGABIT (512K x8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY Winbond
Winbond Winbond
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GENERAL DESCRIPTION
The BM29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as 512K ´8 bits each.
The BM29F040 is offered in an Industry standard 32-pin package which is backward compatible to 1 Megabit and also pin compatible to EEPROMs. The device is offered in PDIP, PLCC and TSOP
packages. The device is designed to be programmed and erased in system with the standard system 5 Volt Vcc supply. An external 12.0 Volts Vpp is not required for program and erase operation. The device can also be reprogrammed in standard EPROM programmers.
The BM29F040 offers access times between 70 to 150 nS. The device has separate chip enable
( CE ), write enable ( WE ) and output enable ( OE ) controls to eliminate bus contention.

FEATURES
· 5.0 V +/- 10% Program and Erase
  - Minimizes system power consumption
  - Simplifies the system design
· Compatible with JEDEC standard commands
  - Uses same software commands as EEPROMs
· Compatible with JEDEC-standard byte wide pinout
  - 32 pin PLCC/TSOP
  - 32 pin DIP
· Automated sector/chip Erase Algorithms
  - No programming before Erase needed
  - Internal program and Erase Margin Check
· Data Polling and Toggle Bit
  - useful for detection of Program and Erase cycle completion
· Sector Erase architecture
  - 8 Equal sectors of 64K bytes each
  - Any combination of multiple Sector Erase
  - Full Chip Erase
· Sector Protection
  - Any number of sectors can be protected from Program and Erase operation
· Low Power Consumption
· Typically 100,000 Program/Erasecycles
· Erase Suspend and Resume
  - Suspend the Sector Erase Operation to allow a READ in another sector
·Low Vcc Write inhibit <3.2 volts
·Single Cycle reset command

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