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BUZ76 Datasheet

Part NameDescriptionManufacturer
BUZ76 N-Channel MOSFET Transistor Iscsemi
Inchange Semiconductor Iscsemi
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BUZ76 image

DESCRIPTION
• 3A,400V
• Drain Source Voltage- : VDSS= 200V(Min)
• Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max)
• High Input Impedance
• Majority Carrier Device

APPLICATIONS
• switching regulators, switching converters
• motor drivers,relay drivers and drivers for high-power Bipolar switching transistors reguiring high speed and gate-driver power.

 

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