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EN25S10 Datasheet

Part NameDescriptionManufacturer
EN25S10 1 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector Eon
Eon Silicon Solution Inc. Eon
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GENERAL DESCRIPTION
The EN25S10 is a 1 Megabit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.
The EN25S10 is designed to allow either single Sector/Block at a time or full chip erase operation. The EN25S10 can be configured to protect part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each sector or block.

FEATURES
• Single power supply operation
   - Full voltage range: 1.65-1.95 volt
• Serial Interface Architecture
   - SPI Compatible: Mode 0 and Mode 3
• 1 M-bit Serial Flash
   - 1 M-bit/128 K-byte/512 pages
   - 256 bytes per programmable page
• High performance
   - 75MHz clock rate
• Low power consumption
   - 7 mA typical active current
   - 1 μA typical power down current
• Uniform Sector Architecture:
   - 32 sectors of 4-Kbyte
   - 4 blocks of 32-Kbyte
   - Any sector or block can be erased individually
• Software and Hardware Write Protection:
   - Block Protect Bits are default set to “1” at Power-up
   - Write Protect all or portion of memory via software
   - Enable/Disable protection with WP# pin
• High performance program/erase speed
   - Page program time: 1.5ms typical
   - Sector erase time: 90ms typical
   - Block erase time 300ms typical
   - Chip erase time: 1 seconds typical
• Lockable 256 byte OTP security sector
• Minimum 100K endurance cycle
• Package Options
   - 8 pins SOP 150mil body width
   - 8 contact USON 2x3 mm
   - All Pb-free packages are RoHS compliant
• Industrial temperature Range

 

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