Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
Home >>> Eon >>> EN29LV160J Datasheet

EN29LV160J Datasheet

Part NameDescriptionManufacturer
EN29LV160J 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only Eon
Eon Silicon Solution Inc. Eon
Other PDF  not available.
PDF DOWNLOAD     
EN29LV160J image

GENERAL DESCRIPTION
The EN29LV160J is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 10µs. The EN29LV160J features 3.0V voltage read and write operation, with access times as fast as 55ns to eliminate the need for WAIT states in high-performance microprocessor systems.

FEATURES
• 3.0V, single power supply operation
   - Minimizes system level power requirements
• Manufactured on 0.28 µm process technology
• High performance
   - Access times as fast as 70 ns
• Low power consumption (typical values at 5 MHz)
   - 7 mA typical active read current
   - 15 mA typical program/erase current
   - 1 µA typical standby current (standard access time to active mode)
• Flexible Sector Architecture:
   - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode)
   - One 8 Kword, two 4 Kword, one 16 Kword and thirty-one 32 Kword sectors (word mode)
   - Supports full chip erase
   - Individual sector erase supported
   - Sector protection:
      Hardware locking of sectors to prevent program or erase operations within individual sectors
      Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors.
• High performance program/erase speed
   - Byte program time: 8µs typical
   - Sector erase time: 200ms typical
   - Chip erase time: 3.5s typical
• JEDEC Standard program and erase commands
• JEDEC standard DATA polling and toggle bits feature
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode
• 0.28 µm double-metal double-poly triple-well CMOS Flash Technology
• Low Vcc write inhibit < 2.5V
• >100K program/erase endurance cycle
• 48-pin TSOP (Type 1)
• Commercial Temperature Range

 

Page Links : 1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  16  17  18  19  20  21  22  23  24  25  26  27  28  29  30  31  32  33  34  35  36  37  38  39  40  41  42  43  44 
 

Other manufacturer searches related to EN29LV160J

Part NameDescriptionPDFManufacturer
S29AL016 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory View Spansion Inc.
AM29LV200 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 volt-only boot sector flash memory View Advanced Micro Devices
AM29LV004B-1 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory View Advanced Micro Devices
EN29LV160J 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only View Unspecified
AM29F160D 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory View Spansion Inc.
AM29F160D 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory View Advanced Micro Devices
AM29DL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory View Advanced Micro Devices
AM29F800BB-150 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory View Advanced Micro Devices
AM29F040B-1 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory View Advanced Micro Devices
AM29LV6402M 128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O™ Control View Advanced Micro Devices

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]