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F1S4N100 Datasheet

Part NameDescriptionManufacturer
F1S4N100 4.3A, 1000V, 3.500 Ohm,High Voltage, N-Channel Power MOSFETs NJSEMI
New Jersey Semiconductor NJSEMI
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The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from an integrated circuit.

Features
• 4.3A, 1000V
• rDS(ON) = 3.500Q
• UIS Rating Curve (Single Pulse)
• -55°C to 150°C Operating Temperature

 

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