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FDN306P Datasheet

Part NameDescriptionManufacturer
FDN306P P-Channel 1.8V Specified PowerTrench® MOSFET Fairchild
Fairchild Semiconductor Fairchild
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FDN306P image

General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.

Features
• –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V RDS(ON) = 50 mΩ @ VGS = –2.5 V RDS(ON) = 80 mΩ @ VGS = –1.8 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• SuperSOT™ -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

Applications
• Battery management
• Load switch
• Battery protection

 

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