This P-Channel 1.8V specified MOSFET uses Fairchildâs advanced low voltage PowerTrench process.
It has been optimized for battery power management applications.
â¢ â2.6 A, â12 V. RDS(ON) = 40 mâ¦ @ VGS = â4.5 V RDS(ON) = 50 mâ¦ @ VGS = â2.5 V RDS(ON) = 80 mâ¦ @ VGS = â1.8 V
â¢ Fast switching speed
â¢ High performance trench technology for extremely low RDS(ON)
â¢ SuperSOTâ¢ -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
â¢ Battery management
â¢ Load switch
â¢ Battery protection