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FMBT3904DW1 Datasheet - Formosa

Part Name
Description
MFG CO.
FMBT3904DW1
Formosa
Formosa Technology 
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FMBT3904DW1 image

Dual General Purpose Transistor NPN+NPN Silicon

Features
• High collector-emitterbreakdien voltage. (BVCEO = 40V@I =1mA)
• Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current.
• Offer NPN+NPN in one package
• Capable of 150mW power dissipation.
• Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228
• Suffix "-H" indicates Halogen-free part, ex.FMBT3904DW1-H.

 

Part Name
Description
PDF
MFG CO.
640 (H) x 480 (V) Interline CCD Image Sensor
ON Semiconductor
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1,024 x 9, DUAL 2,048 x 9, DUAL 4,096 x 9, DUAL 8,192 x 9
Integrated Device Technology
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1,024 x 9, DUAL 2,048 x 9, DUAL 4,096 x 9, DUAL 8,192 x 9
Integrated Device Technology
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1,024 x 9, DUAL 2,048 x 9, DUAL 4,096 x 9, DUAL 8,192 x 9
Integrated Device Technology
DUAL CMOS SyncFIFO™ DUAL 256 x 9, DUAL 512 x 9, DUAL 1,024 x 9, DUAL 2,048 x 9, DUAL 4,096 x 9, DUAL 8,192 x 9
Integrated Device Technology
CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1,024 x 9, DUAL 2,048 x 9, DUAL 4,096 x 9, DUAL 8,192 x 9
Integrated Device Technology
3.3 VOLT CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18 and DUAL 4,096 x 18
Integrated Device Technology
CMOS DUAL SyncFIFO DUAL 256 x 18 DUAL 512 x 18 DUAL 1,024 x 18 DUAL 4,096 x 18
Integrated Device Technology
CMOS dual asynchronous FIFO dual 256 x 9, dual 512 x 9, dual 1024 x 9
Integrated Device Technology
CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1024 x 18
Integrated Device Technology

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