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GS840FH18AGT-10 Datasheet

Part NameDescriptionManufacturer
GS840FH18AGT-10 256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs GSI
Giga Semiconductor GSI
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GS840FH36AT-12 image

Functional Description
Applications
The GS840FH18/32/36A is a 4,718,592-bit (4,194,304-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support. The GS840FH18/32/36A is available in a JEDEC-standard 100-lead TQFP package.

Features
• Flow Through mode operation
• 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Common data inputs and data outputs
• Clock Control, registered, address, data, and control
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP
• Pb-Free 100-lead TQFP package available

 

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