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GS880E18AT-133 Datasheet

Part NameDescriptionManufacturer
GS880E18AT-133 512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs GSI
Giga Semiconductor GSI
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GS880E32AT-225I image

Functional Description
Applications
The GS880E18/32/36AT is a 9,437,184-bit (8,388,608-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

Features
• FT pin for user-configurable flow through or pipeline operation
• Dual Cycle Deselect (DCD) operation
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package

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