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HN29W25611T-50H Datasheet

Part NameDescriptionManufacturer
HN29W25611T-50H 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) Hitachi
Hitachi -> Renesas Electronics Hitachi
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Description
The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29W25611T are more than 16,057 (98% of all sector address) and less than 16,384 sectors.

Features
• On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
• Organization
    - AND Flash Memory: (2048 + 64) bytes × (More than 16,057 sectors)
    - Data register: (2048 + 64) bytes
• Multi-level memory cell
    - 2 bit/per memory cell
• Automatic programming
    - Sector program time: 3.0 ms (typ)
    - System bus free
    - Address, data latch function
    - Internal automatic program verify function
    - Status data polling function
• Automatic erase
    - Single sector erase time: 1.5 ms (typ)
    - System bus free
    - Internal automatic erase verify function
    - Status data polling function
• Erase mode
    - Single sector erase ((2048 + 64) byte unit)
• Fast serial read access time:
    - First access time: 50 µs (max)
    - Serial access time: 50 ns (max)
• Low power dissipation:
    - ICC2 = 50 mA (max) (Read)
    - ISB2 = 50 µA (max) (Standby)
    - ICC3/ICC4 = 40 mA (max) (Erase/Program)
    - ISB3 = 5 µA (max) (Deep standby)
• The following architecture is required for data reliability.
    - Error correction: more than 3-bit error correction per each sector read
    - Spare sectors: 1.8% (290 sectors) within usable sectors

 

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