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IRF1010N Datasheet

Part NameDescriptionManufacturer
IRF1010N HEXFET® Power MOSFET IR
International Rectifier IR
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IRF1010N image

VDSS = 55V
RDS(on) = 11mΩ
ID = 85A‡

Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

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