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IRF1010Z Datasheet

Part NameDescriptionManufacturer
IRF1010Z N-Channel MOSFET Transistor Iscsemi
Inchange Semiconductor Iscsemi
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IRF1010Z image

• DESCRITION
• reliable device for use in a wide variety of applications

• FEATURES
• Static drain-source on-resistance:
   RDS(on) ≤7.5mΩ
• Enhancement mode
• Fast Switching Speed
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

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