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IRF1104L Datasheet

Part NameDescriptionManufacturer
IRF1104L HEXFET® Power MOSFET IR
International Rectifier IR
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IRF1104L image

VDSS = 40V
RDS(on) = 0.009Ω
ID = 100A

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Advanced Process Technology
Ultra Low On-Resistance
Surface Mount (IRF1104S)
Low-profile through-hole (IRF1104L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

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