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IRF131 Datasheet

Part NameDescriptionManufacturer
IRF131 N-CHANNEL POWER MOSFETS Samsung
Samsung Samsung
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IRF130 image

FEATURES
● Low RDS(on)
● Improved inductive ruggedness
● Fast switching times
● Rugged polysilicon gate cell structure
● Low input capacitance
● Extended safe operating area
● Improved high temperature reliability
● TO-3 package (Standard)

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