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IRF1405PBF Datasheet

Part NameDescriptionManufacturer
IRF1405PBF HEXFET® Power MOSFET IR
International Rectifier IR
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IRF1405PBF image

VDSS = 55V
RDS(on) = 5.3mΩ
ID = 169A

Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

Typical Applications
● Electric Power Steering (EPS)
● Anti-lock Braking System (ABS)
● Wiper Control
● Climate Control
● Power Door
● Lead-Free

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