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IRF1405S Datasheet

Part NameDescriptionManufacturer
IRF1405S AUTOMOTIVE MOSFET KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
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IRF1405S image

Description
Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Benefits
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax

Typical Applications
● Electric Power Steering (EPS)
● Anti-lock Braking System (ABS)
● Wiper Control
● Climate Control
● Power Door

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