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IRF1503SPBF Datasheet

Part NameDescriptionManufacturer
IRF1503SPBF HEXFET® Power MOSFET IR
International Rectifier IR
Other PDF  2004  
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IRF1503SPBF image

Description
This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Benefits
• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax

Typical Applications
• Industrial Motor Drive

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