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IRF1503SPBF-2004 Datasheet

Part NameDescriptionManufacturer
IRF1503SPBF HEXFET® Power MOSFET IR
International Rectifier IR
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Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Benefits
• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax

Typical Applications
• 14V Automotive Electrical Systems
• 14V Electronic Power Steering
• Lead-Free

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