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IRF151 Datasheet

Part NameDescriptionManufacturer
IRF151 N-CHANNEL POWER MOSFETS Samsung
Samsung Samsung
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IRF150 image

FEATURES
● LOW RDS(on)
● Improved Inductive ruggedness
● Fast switching times
● Rugged polyslllcon gate cell structure
● Low input capacitance
● Extended safe operating area
● Improved high temperature reliability
● TO-3 package(High current)

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