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IRF630N Datasheet

Part NameDescriptionManufacturer
IRF630N N-Channel MOSFET Transistor KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
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DESCRIPTION
● Drain Current –ID=9.3A@ TC=25℃
● Drain Source Voltage-
   : VDSS= 200V(Min)
● Static Drain-Source On-Resistance
   : RDS(on) = 0.3Ω(Max)
● Fast Switching Speed
● Low Drive Requirement

APPLICATIONS
● This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.

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