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IS42S32400E Datasheet

Part Name
Description
MFG CO.
IS42S32400E
ISSI
Integrated Silicon Solution ISSI
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OVERVIEW
ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks.

FEATURES
•  Clock frequency: 166, 143, 133 MHz
•  Fully synchronous; all signals referenced to a positive clock edge
•  Internal bank for hiding row access/precharge
•  Single Power supply: 3.3V + 0.3V
•  LVTTL interface
•  Programmable burst length – (1, 2, 4, 8, full page)
•  Programmable burst sequence: Sequential/Interleave
•  Auto Refresh (CBR)
•  Self Refresh
•  4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
•  Random column address every clock cycle
•  Programmable CAS latency (2, 3 clocks)
•  Burst read/write and burst read/single write operations capability
•  Burst termination by burst stop and precharge command

 

Part Name
Description
PDF
MFG CO.
128MB 32-bit Direct Rambus DRAM RIMM™ Module
Elpida Memory, Inc
128MB 32-bit Direct Rambus DRAM RIMM™ Module
Elpida Memory, Inc
Synchronous DRAM 4M x 16 Bit x 4 Banks
A-Data Technology
Synchronous DRAM 4M x 16 Bit x 4 Banks
A-Data Technology
1M X 32 Bit X 4 Banks Synchronous DRAM
AMIC Technology
Synchronous DRAM 4M x 8 Bit x 4 Banks
A-Data Technology
Synchronous DRAM 4M x 8 Bit x 4 Banks
A-Data Technology
4M x 16 DDR Synchronous DRAM (SDRAM)
Etron Technology
1M x 32 Bit x 4 Banks Synchronous DRAM
[Elite Semiconductor Memory Technology Inc.
Synchronous DRAM 512K x 32 Bit x 4 Banks
A-Data Technology

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