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IS61LV12816-2003 Datasheet

Part Name
Description
MFG CO.
IS61LV12816
ISSI
Integrated Silicon Solution ISSI
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DESCRIPTION
TheISSIIS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumption.

FEATURES
• High-speed access time: 10, 12, and 15 ns
• CMOS low power operation
• TTL and CMOS compatible interface levels
• Single 3.3V ± 10% power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available

 

Part Name
Description
PDF
MFG CO.
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
128K X 16 HIGH SPEED CMOS STATIC RAM
Taiwan Memory Technology
64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)
Samsung
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
Integrated Circuit Solution Inc
128K x 8 Bit High-Speed CMOS Static RAM
Samsung

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