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IS61NLP25632 Datasheet

Part Name
Description
MFG CO.
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DESCRIPTION
The 8 Meg NP product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, no wait state, device for network and communications customers. They are organized as 262,144 words by 32 bits, 262,144 words by 36 bits and 524,288 words by 18 bits, fabricated with ISSIs advanced CMOS technology.

FEATURES
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single R/W (Read/Write) control pin
• Clock controlled, registered address, data and control
• Interleaved or linear burst sequence control using MODE input
• Three chip enables for simple depth expansion and address pipelining for TQFP
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 119 PBGA package
• Single +3.3V power supply (± 5%)
• NP Version: 3.3V I/O Supply Voltage
• NLP Version: 2.5V I/O Supply Voltage
• Industrial temperature available

 

Part Name
Description
PDF
MFG CO.
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM
White Electronic Designs Corporation
256K X 16/18/ 128K X 32/36 LVTTL/ Pipelined DBA SRAM
AMIC Technology
9-Mbit (256K x 36/512K x 18) Pipelined SRAM
Cypress Semiconductor
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
Cypress Semiconductor
'N' PANEL RECEPTACLE PLUG
Amphenol Aerospace
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
Giga Semiconductor
3.3V 256K × 18 pipeline burst synchronous SRAM
Alliance Semiconductor
3.3V 256K × 18 pipeline burst synchronous SRAM
Alliance Semiconductor
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor

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