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IS62LV12816L Datasheet

Part Name
Description
MFG CO.
IS62LV12816L
ISSI
Integrated Silicon Solution ISSI
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DESCRIPTION
The ISSI IS62LV12816L and IS62LV12816LL are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. They are fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES
• High-speed access time: 55, 70, 100 ns
• CMOS low power operation
    – 120 mW (typical) operating
    – 6 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 2.5V-3.0V VCC power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP (Type II) and 48-pin mini BGA

 

Part Name
Description
PDF
MFG CO.
128K X 16 HIGH SPEED CMOS STATIC RAM
Taiwan Memory Technology
128K X 16 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
128K X 16 LOW POWER CMOS STATIC RAM
Taiwan Memory Technology
CMOS STATIC RAM 1 MEG (128K x 8-BIT)
Integrated Device Technology
128K x 32, 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM
Integrated Circuit Solution Inc
128K x 16 Static RAM
Weida Semiconductor, Inc.
128K x 32 CMOS Static RAM Module
Paradigm Technology
ULTRA LOW POWER 128K x 8 CMOS STATIC RAM
Semiconductor Corporation
3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout
Integrated Device Technology
128K x 8 Bit High-Speed CMOS Static RAM
Samsung

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