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IS62VV25616L Datasheet

Part Name
Description
MFG CO.
IS62VV25616L
ISSI
Integrated Silicon Solution ISSI
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DESCRIPTION
The ISSI IS62VV25616L and IS62VV25616LL are high-speed, 4,194,304 bit static RAMs organized as 262,144 words by 16 bits. They are fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES
• High-speed access time: 70, 85, 100 ns
• CMOS low power operation
    – 36 mW (typical) operating
    – 9 µW (typical) CMOS standby
• TTL compatible interface levels
• Single 1.65V-1.95V VCC power supply
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP (Type II) and 48-pin mini BGA (7.2mm x 8.7mm)

 

Part Name
Description
PDF
MFG CO.
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
FIDELIX
2M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Samsung
VERY LOW POWER 1.8V 8K/4K x 16 DUAL-PORT STATIC RAM
Integrated Device Technology
Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Brilliance Semiconductor
256K x 16 1.8V ULTRA LOW POWER CMOS STATIC RAM
Integrated Circuit Solution Inc
ULTRA LOW POWER 128K x 8 CMOS STATIC RAM
Semiconductor Corporation
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Integrated Circuit Solution Inc

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