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IXFN34N100 Datasheet

Part NameDescriptionManufacturer
IXFN34N100 HiPerFET™ Power MOSFETs Single Die MOSFET IXYS
IXYS CORPORATION IXYS
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IXFN34N100 image

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr

Features
● International standard packages
● miniBLOC, with Aluminium nitride isolation
● Low RDS (on) HDMOSTM process
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low package inductance
● Fast intrinsic Rectifier

Applications
● DC-DC converters
● Battery chargers
● Switched-mode and resonant-mode power supplies
● DC choppers
● Temperature and lighting controls

Advantages
● Easy to mount
● Space savings
● High power density

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