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IXFN39N90 Datasheet

Part NameDescriptionManufacturer
IXFN39N90 HiPerFET™ Power MOSFETs Single MOSFET Die IXYS
IXYS CORPORATION IXYS
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IXFN39N90 image

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr

Features
• International standard packages
• miniBLOC, with Aluminium nitride isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier

Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls

Advantages
• Easy to mount
• Space savings
• High power density

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