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IXTH20N60 Datasheet

Part NameDescriptionManufacturer
IXTH20N60 MegaMOSTMFET IXYS
IXYS CORPORATION IXYS
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IXTH20N60 image

MegaMOS™FET

N-Channel Enhancement Mode

Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Low package inductance (< 5 nH)
   - easy to drive and to protect
• Fast switching times

Applications
• Switch-mode and resonant-mode power supplies
• Motor control
• Uninterruptible Power Supplies (UPS)
• DC choppers

Advantages
• Easy to mount with 1 screw (TO-247)
   (isolated mounting screw hole)
• Space savings
• High power density

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