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K64004C1D Datasheet

Part NameDescriptionManufacturer
K64004C1D 1M x 4 Bit High-Speed CMOS Static RAM Samsung
Samsung Samsung
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GENERAL DESCRIPTION
The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4004C1D is packaged in a 400 mil 32-pin plastic SOJ.

FEATURES
• Fast Access Time 10ns(Max.)
• Low Power Dissipation
    Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.)
    Operating K6R4004C1D-10 : 65mA(Max.)
    Single 5.0V±10% Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration K6R4004C1D-J : 32-SOJ-400
• Operating in Commercial and Industrial Temperature range.

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