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LET21004 Datasheet

Part NameDescriptionManufacturer
LET21004 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package ST-Microelectronics
STMicroelectronics ST-Microelectronics
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DESCRIPTION
The LET21004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 2.1 GHz. LET21004 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. LET21004’s superior linearity performance makes it an ideal solution for base station applications.

Designed for GSM / EDGE / IS-97 / WCDMA applications

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 4 W with 11 dB gain @ 2170 MHz / 26 V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION

 

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