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LET21030C Datasheet

Part NameDescriptionManufacturer
LET21030C RF POWER TRANSISTORS Ldmos Enhanced Technology ST-Microelectronics
STMicroelectronics ST-Microelectronics
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DESCRIPTION
The LET21030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.1 GHz. The LET21030C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.

Designed for GSM / EDGE / IS-97 / WCDMA applications

• EXCELLENT THERMAL STABILITY
• POUT = 30 W with 11 dB gain @ 2170 MHz
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION

 

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