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LET9002 Datasheet

Part NameDescriptionManufacturer
LET9002 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package ST-Microelectronics
STMicroelectronics ST-Microelectronics
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DESCRIPTION
The LET9002 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The LET9002 is designed for high gain and broadband performance operating in common source mode at 26 V. LET9002 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™.
It is ideal for digital cellular BTS applications requiring high linearity.

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 2 W with 17 dB gain @ 960 MHz / 26 V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
• SUPPLIED IN TAPE & REEL OF 3K UNITS

 

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