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LET9060C Datasheet

Part NameDescriptionManufacturer
LET9060C RF POWER TRANSISTORS Ldmos Enhanced Technology ST-Microelectronics
STMicroelectronics ST-Microelectronics
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DESCRIPTION
The LET9060C is an N-Channel enhancement-mode lateral Field-Effect RF power transistor, designed for high gain broadband, commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1.0 GHz. LET9060C boasts the excellent gain, linearity and reliability of the ST latest LDMOS technology. Its superior performances make it an ideal solution for base station applications.

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 60 W WITH 17.3 dB gain @ 945 MHz
• BeO FREE PACKAGE
• HIGH GAIN
• ESD PROTECTION

 

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