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M29W800DB70M1-2018 Datasheet

Part NameDescriptionManufacturer
M29W800DB70M1 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Numonyx
Numonyx -> Micron Numonyx
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Description
The M29W800D is a 8-Mbit (1 Mbit x 8 or 512 Kbits x 16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its read mode where it can be read in the same way as a ROM or EPROM.

Features
■ Supply voltage
   – VCC = 2.7 V to 3.6 V for program, erase and read
■ Access times: 45, 70, 90 ns
■ Programming time
   – 10 μs per byte/word typical
■ 19 memory blocks
   – 1 boot block (top or bottom location)
   – 2 parameter and 16 main blocks
■ Program/erase controller
   – Embedded byte/word program algorithms
■ Erase suspend and resume modes
   – Read and program another block during erase suspend
■ Unlock bypass program command
   – Faster production/batch programming
■ Temporary block unprotection mode
■ Common flash interface
   – 64-bit security code
■ Low power consumption
   – Standby and automatic standby
■ 100,000 program/erase cycles per block
■ Electronic signature
   – Manufacturer code: 0020h
   – Top device code M29W800DT: 22D7h
   – Bottom device code M29W800DB: 225Bh

 

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