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M29W800DB70M1-2018 Datasheet

Part Name
Description
MFG CO.
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Description
The M29W800D is a 8-Mbit (1 Mbit x 8 or 512 Kbits x 16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. On power-up the memory defaults to its read mode where it can be read in the same way as a ROM or EPROM.

Features
■ Supply voltage
   – VCC = 2.7 V to 3.6 V for program, erase and read
■ Access times: 45, 70, 90 ns
■ Programming time
   – 10 μs per byte/word typical
■ 19 memory blocks
   – 1 boot block (top or bottom location)
   – 2 parameter and 16 main blocks
■ Program/erase controller
   – Embedded byte/word program algorithms
■ Erase suspend and resume modes
   – Read and program another block during erase suspend
■ Unlock bypass program command
   – Faster production/batch programming
■ Temporary block unprotection mode
■ Common flash interface
   – 64-bit security code
■ Low power consumption
   – Standby and automatic standby
■ 100,000 program/erase cycles per block
■ Electronic signature
   – Manufacturer code: 0020h
   – Top device code M29W800DT: 22D7h
   – Bottom device code M29W800DB: 225Bh

 

Part Name
Description
PDF
MFG CO.
8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory
STMicroelectronics
SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 4-MBIT (256K X 16), 8-MBIT (512K X 16), 16-MBIT (1024K X 16) FLASH MEMORY FAMILY
Intel
SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 4-MBIT (256K X 16), 8-MBIT (512K X 16), 16-MBIT (1024K X 16) FLASH MEMORY FAMILY
Intel
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Sharp Electronics
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
Intel
16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFile™ MEMORY
Intel
8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory
STMicroelectronics
8 MBIT(1 MBIT x 8) FLASH MEMORY
Sharp Electronics
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1
Advanced Micro Devices

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