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M36W108AB Datasheet

Part NameDescriptionManufacturer
M36W108AB 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product ST-Microelectronics
STMicroelectronics ST-Microelectronics
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DESCRIPTION
The M36W108A is multi-chip device containing an 8 Mbit boot block Flash memory and a 1 Mbit of SRAM. The device is offered in the new Chip Scale Package solutions: LBGA48 1.0mm ball pitch and LGA48 1.0mm land pitch.

■ SUPPLY VOLTAGE
    – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read
■ ACCESS TIME: 100ns
■ LOW POWER CONSUMPTION
    – Read: 40mA max. (SRAM chip)
    – Stand-by: 30µA max. (SRAM chip)
    – Read: 10mA max. (Flash chip)
    – Stand-by: 100µA max. (Flash chip)

FLASH MEMORY
■ 8 Mbit (1Mb x 8) BOOT BLOCK ERASE
■ PROGRAMMING TIME: 10µs typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
    – Program Byte-by-Byte
    – Status Register bits and Ready/Busy Output
■ SECURITY PROTECTION MEMORY AREA
■ INSTRUCTION ADDRESS CODING: 3 digits
■ MEMORY BLOCKS
    – Boot Block (Top or Bottom location)
    – Parameter and Main Blocks
■ BLOCK, MULTI-BLOCK and CHIP ERASE
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another Block during Erase Suspend
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code, M36W108AT: D2h
    – Device Code, M36W108AB: DCh

SRAM
■ 1 Mbit (128Kb x 8)
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS
■ LOW VCC DATA RETENTION: 2V

 

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